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Materials 2017, 10(2), 168; doi:10.3390/ma10020168

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

1,2
,
1,2,* , 1,2
and
1,2,*
1
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
2
State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 610054, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Received: 28 December 2016 / Revised: 30 January 2017 / Accepted: 9 February 2017 / Published: 13 February 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
View Full-Text   |   Download PDF [1958 KB, uploaded 13 February 2017]   |  

Abstract

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10−10 A, the highest photosensitivity of 3.9 × 106, and the largest responsivity of 1.5 × 104 A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays. View Full-Text
Keywords: InGaMgO; post-deposition annealing; ultraviolet photo-TFT; oxygen vacancy; photosensitivity; responsivity InGaMgO; post-deposition annealing; ultraviolet photo-TFT; oxygen vacancy; photosensitivity; responsivity
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Zhang, Y.; Qian, L.-X.; Wu, Z.; Liu, X. Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity. Materials 2017, 10, 168.

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