High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors
AbstractOxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. View Full-Text
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Zhang, J.; Yang, J.; Li, Y.; Wilson, J.; Ma, X.; Xin, Q.; Song, A. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials 2017, 10, 319.
Zhang J, Yang J, Li Y, Wilson J, Ma X, Xin Q, Song A. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials. 2017; 10(3):319.Chicago/Turabian Style
Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin. 2017. "High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors." Materials 10, no. 3: 319.
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