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Materials 2017, 10(3), 319;

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK
School of Physics, Shandong University, Jinan 250100, China
Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Received: 5 January 2017 / Revised: 28 February 2017 / Accepted: 15 March 2017 / Published: 21 March 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
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Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. View Full-Text
Keywords: thin-film transistor; ring oscillators; IGZO; SnO thin-film transistor; ring oscillators; IGZO; SnO

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Zhang, J.; Yang, J.; Li, Y.; Wilson, J.; Ma, X.; Xin, Q.; Song, A. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials 2017, 10, 319.

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