Sensors 2009, 9(11), 8831-8851; doi:10.3390/s91108831
Review

An Integrated ISFET Sensor Array

Kazuo Nakazatoemail
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
Received: 5 August 2009; in revised form: 30 September 2009 / Accepted: 16 October 2009 / Published: 4 November 2009
(This article belongs to the Special Issue ISFET Sensors)
PDF Full-text Download PDF Full-Text [1308 KB, uploaded 4 November 2009 10:26 CET]
Abstract: A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.
Keywords: ISFET; biosensor array; source-drain follower; CMOS biotechnology

Article Statistics

Click here to load and display the download statistics.

Cite This Article

MDPI and ACS Style

Nakazato, K. An Integrated ISFET Sensor Array. Sensors 2009, 9, 8831-8851.

AMA Style

Nakazato K. An Integrated ISFET Sensor Array. Sensors. 2009; 9(11):8831-8851.

Chicago/Turabian Style

Nakazato, Kazuo. 2009. "An Integrated ISFET Sensor Array." Sensors 9, no. 11: 8831-8851.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert