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Sensors 2009, 9(11), 8831-8851; doi:10.3390/s91108831
Review

An Integrated ISFET Sensor Array

Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
Received: 5 August 2009 / Revised: 30 September 2009 / Accepted: 16 October 2009 / Published: 4 November 2009
(This article belongs to the Special Issue ISFET Sensors)
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Abstract

A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.
Keywords: ISFET; biosensor array; source-drain follower; CMOS biotechnology ISFET; biosensor array; source-drain follower; CMOS biotechnology
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Nakazato, K. An Integrated ISFET Sensor Array. Sensors 2009, 9, 8831-8851.

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