Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors†
AbstractThis paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device. View Full-Text
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Stevens, E.G.; Clayhold, J.A.; Doan, H.; Fabinski, R.P.; Hynecek, J.; Kosman, S.L.; Parks, C. Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors. Sensors 2017, 17, 2841.
Stevens EG, Clayhold JA, Doan H, Fabinski RP, Hynecek J, Kosman SL, Parks C. Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors. Sensors. 2017; 17(12):2841.Chicago/Turabian Style
Stevens, Eric G.; Clayhold, Jeffrey A.; Doan, Hung; Fabinski, Robert P.; Hynecek, Jaroslav; Kosman, Stephen L.; Parks, Christopher. 2017. "Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors." Sensors 17, no. 12: 2841.
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