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Sensors 2017, 17(12), 2841; https://doi.org/10.3390/s17122841

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

1
ON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USA
2
ON Semiconductor, 2660 Zanker Road, San Jose, CA 95134, USA
This paper is an expanded version of our published paper Stevens, E.G.; Clayhold, J.; Doan, H.; Fabinski, J. Hynecek, R.; Kosman, S.; Parks, C. Recent Enhancements to Electron Multiplying CCD Image Sensors. In Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan, 30 May–2 June 2017.
*
Author to whom correspondence should be addressed.
Received: 26 September 2017 / Revised: 28 November 2017 / Accepted: 30 November 2017 / Published: 7 December 2017
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
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Abstract

This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device. View Full-Text
Keywords: interline CCD; EMCCD; quantum efficiency; low noise; gain aging interline CCD; EMCCD; quantum efficiency; low noise; gain aging
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Stevens, E.G.; Clayhold, J.A.; Doan, H.; Fabinski, R.P.; Hynecek, J.; Kosman, S.L.; Parks, C. Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors. Sensors 2017, 17, 2841.

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