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Sensors 2016, 16(6), 913; doi:10.3390/s16060913

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

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National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
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Key Laboratory for Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Taiyuan 030051, China
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Authors to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 6 April 2016 / Revised: 13 June 2016 / Accepted: 14 June 2016 / Published: 18 June 2016
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [5650 KB, uploaded 18 June 2016]   |  

Abstract

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. View Full-Text
Keywords: SOI; high-temperature piezoresistive pressure sensor; temperature compensation; integrated signal-conditioning circuit SOI; high-temperature piezoresistive pressure sensor; temperature compensation; integrated signal-conditioning circuit
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Yao, Z.; Liang, T.; Jia, P.; Hong, Y.; Qi, L.; Lei, C.; Zhang, B.; Xiong, J. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit. Sensors 2016, 16, 913.

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