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Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
* Author to whom correspondence should be addressed.
Received: 13 September 2013; in revised form: 24 October 2013 / Accepted: 28 October 2013 / Published: 29 October 2013
Abstract: This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT.
Keywords: magnetic sensor; Lorentz force; CMOS; post-process
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Hsieh, C.-H.; Dai, C.-L.; Yang, M.-Z. Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors. Sensors 2013, 13, 14728-14739.
Hsieh C-H, Dai C-L, Yang M-Z. Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors. Sensors. 2013; 13(11):14728-14739.
Hsieh, Chen-Hsuan; Dai, Ching-Liang; Yang, Ming-Zhi. 2013. "Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors." Sensors 13, no. 11: 14728-14739.