CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties
AbstractThis paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and initial stress is derived based on Euler’s beam model and the minimum energy method. Then one can use the aforesaid closed form solution of the pull-in voltage to extract the Young’s modulus and mean stress of the test structures. The test cases include the test-key fabricated by a TSMC 0.18 μm standard CMOS process, and the experimental results refer to Osterberg’s work on the pull-in voltage of single crystal silicone microbridges. The extracted material properties calculated by the present algorithm are valid. Besides, this paper also analyzes the robustness of this algorithm regarding the dimension effects of test-keys. This mechanical properties extracting method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test process is non-destructive.
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Chuang, W.-C.; Hu, Y.-C.; Chang, P.-Z. CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties. Sensors 2012, 12, 17094-17111.
Chuang W-C, Hu Y-C, Chang P-Z. CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties. Sensors. 2012; 12(12):17094-17111.Chicago/Turabian Style
Chuang, Wan-Chun; Hu, Yuh-Chung; Chang, Pei-Zen. 2012. "CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties." Sensors 12, no. 12: 17094-17111.