Sensors 2011, 11(11), 10624-10637; doi:10.3390/s111110624
Review

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

Eyal Cohen 1,* email, Naomi Elfassy 1 email, Guy Koplovitz 1 email, Shira Yochelis 1 email, Sergey Shusterman 2 email, Divine P. Kumah 3 email, Yizhak Yacoby 4 email, Roy Clarke 3 email and Yossi Paltiel 1 email
1 Applied Physics Department, The Hebrew University, Jerusalem 91904, Israel 2 Solid State Physics, Electro-optics Division, Soreq NRC, Yavne 81800, Israel 3 Applied Physics Program, University of Michigan, 1011 North University Avenue, Ann Arbor, MI 48109, USA 4 Racah Institue of Physics, The Hebrew University, Jerusalem 91904, Israel
* Author to whom correspondence should be addressed.
Received: 16 September 2011; in revised form: 25 October 2011 / Accepted: 2 November 2011 / Published: 8 November 2011
(This article belongs to the Special Issue Sensing with Quantum Dots)
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Abstract: In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (“nano-drilling”) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.
Keywords: quantum dots; droplet-heteroepitaxy; surface X-ray diffraction; direct methods; MOVPE

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MDPI and ACS Style

Cohen, E.; Elfassy, N.; Koplovitz, G.; Yochelis, S.; Shusterman, S.; Kumah, D.P.; Yacoby, Y.; Clarke, R.; Paltiel, Y. Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions. Sensors 2011, 11, 10624-10637.

AMA Style

Cohen E, Elfassy N, Koplovitz G, Yochelis S, Shusterman S, Kumah DP, Yacoby Y, Clarke R, Paltiel Y. Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions. Sensors. 2011; 11(11):10624-10637.

Chicago/Turabian Style

Cohen, Eyal; Elfassy, Naomi; Koplovitz, Guy; Yochelis, Shira; Shusterman, Sergey; Kumah, Divine P.; Yacoby, Yizhak; Clarke, Roy; Paltiel, Yossi. 2011. "Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions." Sensors 11, no. 11: 10624-10637.

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