Next Article in Journal
FPGA-Based Fused Smart Sensor for Dynamic and Vibration Parameter Extraction in Industrial Robot Links
Next Article in Special Issue
SirT1—A Sensor for Monitoring Self-Renewal and Aging Process in Retinal Stem Cells
Previous Article in Journal
One-Dimensional Oxide Nanostructures as Gas-Sensing Materials: Review and Issues
Previous Article in Special Issue
Electrical Capacitance Volume Tomography: Design and Applications
Sensors 2010, 10(4), 4100-4113; doi:10.3390/s100404100

Ultra-High-Speed Image Signal Accumulation Sensor

1,* , 2
1 Graduate School of Science and Engineering, Kinki University, Higashi-Osaka, Osaka 577-8502, Japan 2 School of Engineering and Applied Sciences, Harvard University, 33 Oxford Street, Cambridge, MA 02138, USA 3 School of Biology-Oriented Science and Technology, Kinki University, Wakayama 649-6493, Japan 4 Kinki University Technical College, Kumano, Mie 519-4935, Japan 5 Nuclear Sensing Research Group, Nuclear Science and Engineering Directorate, JAEA, Tokai, Naka, Ibaraki 319-1195, Japan 6 Neutron Science Section, Materials & Life Science Division, J-PARC Center, Tokai, Naka, Ibaraki 319-1195, Japan
* Author to whom correspondence should be addressed.
Received: 24 March 2010 / Revised: 8 April 2010 / Accepted: 16 April 2010 / Published: 23 April 2010
(This article belongs to the Special Issue Delft Workshop 2008-2009—Sensors and Imagers: a VLSI Perspective)
View Full-Text   |   Download PDF [1901 KB, uploaded 21 June 2014]   |  


Averaging of accumulated data is a standard technique applied to processing data with low signal-to-noise ratios (SNR), such as image signals captured in ultra-high-speed imaging. The authors propose an architecture layout of an ultra-high-speed image sensor capable of on-chip signal accumulation. The very high frame rate is enabled by employing an image sensor structure with a multi-folded CCD in each pixel, which serves as an in situ image signal storage. The signal accumulation function is achieved by direct connection of the first and the last storage elements of the in situ storage CCD. It has been thought that the multi-folding is achievable only by driving electrodes with complicated and impractical layouts. Simple configurations of the driving electrodes to overcome the difficulty are presented for two-phase and four-phase transfer CCD systems. The in situ storage image sensor with the signal accumulation function is named Image Signal Accumulation Sensor (ISAS).
Keywords: signal accumulation; averaging technique; CCD; CMOS; high speed; image sensor; ISIS; ISAS signal accumulation; averaging technique; CCD; CMOS; high speed; image sensor; ISIS; ISAS
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

Further Mendeley | CiteULike
Export to BibTeX |
EndNote |
MDPI and ACS Style

Etoh, T.G.; Son, D.V.T.; Akino, T.K.; Akino, T.; Nishi, K.; Kureta, M.; Arai, M. Ultra-High-Speed Image Signal Accumulation Sensor. Sensors 2010, 10, 4100-4113.

View more citation formats

Related Articles

Article Metrics

For more information on the journal, click here


[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert