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Sensors 2010, 10(4), 4083-4099; doi:10.3390/s100404083
Review
One-Dimensional Oxide Nanostructures as Gas-Sensing Materials: Review and Issues
1
Nano-Materials Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea
2
Electronic Materials Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea
* Author to whom correspondence should be addressed.
Received: 3 March 2010; in revised form: 15 April 2010 / Accepted: 16 April 2010 / Published: 22 April 2010
(This article belongs to the Special Issue Metal-Oxide Based Nanosensors)
Abstract: In this article, we review gas sensor application of one-dimensional (1D) metal-oxide nanostructures with major emphases on the types of device structure and issues for realizing practical sensors. One of the most important steps in fabricating 1D-nanostructure devices is manipulation and making electrical contacts of the nanostructures. Gas sensors based on individual 1D nanostructure, which were usually fabricated using electron-beam lithography, have been a platform technology for fundamental research. Recently, gas sensors with practical applicability were proposed, which were fabricated with an array of 1D nanostructures using scalable micro-fabrication tools. In the second part of the paper, some critical issues are pointed out including long-term stability, gas selectivity, and room-temperature operation of 1D-nanostructure-based metal-oxide gas sensors.
Keywords: 1-dimensional nanostructures; gas sensors; long-term stability; gas selectivity; electronic-nose; room-temperature operation
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MDPI and ACS Style
Choi, K.J.; Jang, H.W. One-Dimensional Oxide Nanostructures as Gas-Sensing Materials: Review and Issues. Sensors 2010, 10, 4083-4099.
AMA StyleChoi KJ, Jang HW. One-Dimensional Oxide Nanostructures as Gas-Sensing Materials: Review and Issues. Sensors. 2010; 10(4):4083-4099.
Chicago/Turabian StyleChoi, Kyoung Jin; Jang, Ho Won. 2010. "One-Dimensional Oxide Nanostructures as Gas-Sensing Materials: Review and Issues." Sensors 10, no. 4: 4083-4099.
