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Sensors 2010, 10(12), 10571-10600; doi:10.3390/s101210571

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

* ,
Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy
* Author to whom correspondence should be addressed.
Received: 15 October 2010 / Revised: 10 November 2010 / Accepted: 20 November 2010 / Published: 29 November 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)


Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
Keywords: optoelectronics; photodetector; silicon; waveguide; ring resonator; absorption optoelectronics; photodetector; silicon; waveguide; ring resonator; absorption
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Casalino, M.; Coppola, G.; Iodice, M.; Rendina, I.; Sirleto, L. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives. Sensors 2010, 10, 10571-10600.

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