Abstract: Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
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Casalino, M.; Coppola, G.; Iodice, M.; Rendina, I.; Sirleto, L. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives. Sensors 2010, 10, 10571-10600.
Casalino M, Coppola G, Iodice M, Rendina I, Sirleto L. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives. Sensors. 2010; 10(12):10571-10600.
Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi. 2010. "Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives." Sensors 10, no. 12: 10571-10600.