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Sensors 2010, 10(12), 10571-10600; https://doi.org/10.3390/s101210571

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy
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Received: 15 October 2010 / Revised: 10 November 2010 / Accepted: 20 November 2010 / Published: 29 November 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
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Abstract

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared. View Full-Text
Keywords: optoelectronics; photodetector; silicon; waveguide; ring resonator; absorption optoelectronics; photodetector; silicon; waveguide; ring resonator; absorption
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Casalino, M.; Coppola, G.; Iodice, M.; Rendina, I.; Sirleto, L. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives. Sensors 2010, 10, 10571-10600.

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