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Ge-Photodetectors for Si-Based Optoelectronic Integration
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 Singapore, Singapore
* Author to whom correspondence should be addressed.
Received: 5 November 2010; in revised form: 29 November 2010 / Accepted: 10 January 2011 / Published: 12 January 2011
Abstract: High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 µm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends.
Keywords: germanium; photodetector; Si photonics
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MDPI and ACS Style
Wang, J.; Lee, S. Ge-Photodetectors for Si-Based Optoelectronic Integration. Sensors 2011, 11, 696-718.
Wang J, Lee S. Ge-Photodetectors for Si-Based Optoelectronic Integration. Sensors. 2011; 11(1):696-718.
Wang, Jian; Lee, Sungjoo. 2011. "Ge-Photodetectors for Si-Based Optoelectronic Integration." Sensors 11, no. 1: 696-718.