Special Issue "Low k Dielectic Materials"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (30 June 2012)
Dr. Rajendra Singh
The Holcombe Department of Electrical and Computer Engineering, Clemson University, 105 Riggs Hall, Room 206, Clemson, S.C. 29634, USA
For Low k dielectric materials, the value of dielectric constant is less than the dielectric constant of silicon dioxide. Such materials are of great importance for multi-level interconnections of nanoelectronics and radio frequency (RF) devices and circuits. Other applications include optoelectronics, 3-D integrated circuits, microelectromechanical systems (MEMS), nanoelectromechanical (NEMS), sensors and detectors and packaging of various types of devices and circuits. All topics related to synthesis, and properties of low-k dielectrics, various processing techniques, process integration, performance and reliability of low-K based devices, circuits and systems are of interest for this journal issue.
Dr. Rajendra Singh
- Low k dielectrics
- thermal properties
- structural properties
- process integration
- Low k and MEMS
- Low k and NEMS
- R-F devices and circuits
- Low k and 3-D integrated circuits
- multi-level Interconnections
Review: Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models
Materials 2012, 5(9), 1602-1625; doi:10.3390/ma5091602
Received: 25 June 2012; in revised form: 30 August 2012 / Accepted: 4 September 2012 / Published: 12 September 2012| Download PDF Full-text (301 KB)
Article: A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films
Materials 2012, 5(3), 377-384; doi:10.3390/ma5030377
Received: 19 December 2011; in revised form: 31 January 2012 / Accepted: 15 February 2012 / Published: 2 March 2012| Download PDF Full-text (210 KB)
Last update: 27 February 2014