Special Issue "Low k Dielectic Materials"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (30 June 2012)
Dr. Rajendra Singh
The Holcombe Department of Electrical and Computer Engineering, Clemson University, 105 Riggs Hall, Room 206, Clemson, S.C. 29634, USA
For Low k dielectric materials, the value of dielectric constant is less than the dielectric constant of silicon dioxide. Such materials are of great importance for multi-level interconnections of nanoelectronics and radio frequency (RF) devices and circuits. Other applications include optoelectronics, 3-D integrated circuits, microelectromechanical systems (MEMS), nanoelectromechanical (NEMS), sensors and detectors and packaging of various types of devices and circuits. All topics related to synthesis, and properties of low-k dielectrics, various processing techniques, process integration, performance and reliability of low-K based devices, circuits and systems are of interest for this journal issue.
Dr. Rajendra Singh
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. Papers will be published continuously (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed Open Access monthly journal published by MDPI.
- Low k dielectrics
- thermal properties
- structural properties
- process integration
- Low k and MEMS
- Low k and NEMS
- R-F devices and circuits
- Low k and 3-D integrated circuits
- multi-level Interconnections
Article: A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films
Materials 2012, 5(3), 377-384; doi:10.3390/ma5030377
Received: 19 December 2011; in revised form: 31 January 2012 / Accepted: 15 February 2012 / Published: 2 March 2012| Download PDF Full-text (210 KB)
Review: Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models
Materials 2012, 5(9), 1602-1625; doi:10.3390/ma5091602
Received: 25 June 2012; in revised form: 30 August 2012 / Accepted: 4 September 2012 / Published: 12 September 2012| Download PDF Full-text (301 KB)
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Type of Paper: Article
Title: A Chemical Component Design Method based on Fractal Theory and Its Applications in Low-k and High Thermal Conductivity Ceramics Made of AlN/BN/SiOC
Authors: Xijie Dong and Yifan Hu
Affiliation: School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China; E-Mail: email@example.com; Tel.: 86-27-87557493; Fax: 86-27-87544525
Abstract: In this work, we develop a new design method based on fractal theory and use it to design low-dielectric constant and high thermal conductivity materials. In particular, we used this method to prepare low-k and high thermal conductivity samples made of AlN/BN/SiOC with different component fractions. Measurements to determine the dielectric and thermal properties have also been performed, and the results show that we successfully synthesized ceramic samples with low dielectric constants (<3.5) and high thermal conductivity (³2 W·m−1·K−1). These results indicate that the proposed material component design method is valid.
Keywords: material design; composite materials; low-dielectric constant; high thermal conductivity
Last update: 12 October 2012