Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam
AbstractThree-dimensional structures of microelectro-mechanical systems (MEMS)-based Ge waveguide on a Si beam were fabricated for dynamic tuning of the fundamental absorption edge of Ge by external stressing. The application of various amounts of external forces up to 1 GPa onto the Si beam shows clear red-shifts in the absorption edge of Ge waveguides on the Si beam by ~40 nm. This shift was reproduced by the deformation potential theory, considering that mode of propagation in the Ge waveguide. The wavelength tuning range obtained makes it possible to cover the whole C-band of optical communication, indicating it to be a promising approach to electro-absorption Ge modulators to get them to work with a broader wavelength range than previously reported. View Full-Text
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Hirase, M.; Nguyen, L.M.; Fukuda, H.; Ishikawa, Y.; Wada, K. Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam. Photonics 2016, 3, 14.
Hirase M, Nguyen LM, Fukuda H, Ishikawa Y, Wada K. Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam. Photonics. 2016; 3(2):14.Chicago/Turabian Style
Hirase, Masashi; Nguyen, Luan M.; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi. 2016. "Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam." Photonics 3, no. 2: 14.
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