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Photonics 2016, 3(2), 14; doi:10.3390/photonics3020014

Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam

Department of Materials Engineering, The University of Tokyo, Tokyo 113-8654, Japan
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Received: 1 March 2016 / Revised: 15 March 2016 / Accepted: 17 March 2016 / Published: 30 March 2016
(This article belongs to the Special Issue 3D- and 2D-Nanofabrication for Photonic Devices)
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Abstract

Three-dimensional structures of microelectro-mechanical systems (MEMS)-based Ge waveguide on a Si beam were fabricated for dynamic tuning of the fundamental absorption edge of Ge by external stressing. The application of various amounts of external forces up to 1 GPa onto the Si beam shows clear red-shifts in the absorption edge of Ge waveguides on the Si beam by ~40 nm. This shift was reproduced by the deformation potential theory, considering that mode of propagation in the Ge waveguide. The wavelength tuning range obtained makes it possible to cover the whole C-band of optical communication, indicating it to be a promising approach to electro-absorption Ge modulators to get them to work with a broader wavelength range than previously reported. View Full-Text
Keywords: modulators; electro-refractive; dynamic tuning, integrated photonics; MEMS modulators; electro-refractive; dynamic tuning, integrated photonics; MEMS
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Hirase, M.; Nguyen, L.M.; Fukuda, H.; Ishikawa, Y.; Wada, K. Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam. Photonics 2016, 3, 14.

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