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Photonics 2015, 2(2), 414-425; doi:10.3390/photonics2020414

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Physics Department, Lancaster University, Lancaster LA1 4YB, UK
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Received: 27 February 2015 / Revised: 10 April 2015 / Accepted: 11 April 2015 / Published: 15 April 2015
(This article belongs to the Special Issue Quantum Dot Based Lasers and Photonic Devices)
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Abstract

In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures. View Full-Text
Keywords: quantum dots; mid-infrared; semiconductor lasers quantum dots; mid-infrared; semiconductor lasers
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lu, Q.; Zhuang, Q.; Krier, A. Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers. Photonics 2015, 2, 414-425.

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