Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers
AbstractIn this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures. View Full-Text
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Lu, Q.; Zhuang, Q.; Krier, A. Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers. Photonics 2015, 2, 414-425.
Lu Q, Zhuang Q, Krier A. Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers. Photonics. 2015; 2(2):414-425.Chicago/Turabian Style
Lu, Qi; Zhuang, Qiandong; Krier, Anthony. 2015. "Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers." Photonics 2, no. 2: 414-425.