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Photonics 2015, 2(2), 646-658; doi:10.3390/photonics2020646

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

1
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
2
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
*
Author to whom correspondence should be addressed.
Received: 29 May 2015 / Revised: 14 June 2015 / Accepted: 15 June 2015 / Published: 18 June 2015
(This article belongs to the Special Issue Quantum Dot Based Lasers and Photonic Devices)
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Abstract

Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates. View Full-Text
Keywords: quantum dot; semiconductor lasers; superluminescent light-emitting diodes; Si photonics; monolithic integration quantum dot; semiconductor lasers; superluminescent light-emitting diodes; Si photonics; monolithic integration
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Chen, S.; Tang, M.; Wu, J.; Jiang, Q.; Dorogan, V.; Benamara, M.; Mazur, Y.I.; Salamo, G.J.; Liu, H. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate. Photonics 2015, 2, 646-658.

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