Next Article in Journal
Integrated Circuit Conception: A Wire Optimization Technic Reducing Interconnection Delay in Advanced Technology Nodes
Previous Article in Journal
Quiet Zone Enhancement for a Target Location Using an Improved Virtual Sensing Algorithm
Article Menu
Issue 4 (December) cover image

Export Article

Open AccessFeature PaperArticle
Electronics 2017, 6(4), 77; https://doi.org/10.3390/electronics6040077

A Nonlinear Drift Memristor Model with a Modified Biolek Window Function and Activation Threshold

Department of Theoretical Electrical Engineering, Technical University Sofia, Faculty of Automatics,1000 Sofia, 8 St. Kl. Ohridski Blvd, Bulgaria
*
Author to whom correspondence should be addressed.
Received: 28 August 2017 / Revised: 28 September 2017 / Accepted: 29 September 2017 / Published: 3 October 2017
(This article belongs to the Special Issue Nano-materials Based 3D Electronics)
View Full-Text   |   Download PDF [5253 KB, uploaded 11 October 2017]   |  

Abstract

The main idea of the present research is to propose a new memristor model with a highly nonlinear ionic drift suitable for computer simulations of titanium dioxide memristors for a large region of memristor voltages. For this purpose, a combination of the original Biolek window function and a weighted sinusoidal window function is applied. The new memristor model is based both on the Generalized Boundary Condition Memristor (GBCM) Model and on the Biolek model, but it has an improved property—an increased extent of nonlinearity of the ionic drift due to the additional weighted sinusoidal window function. The modified memristor model proposed here is compared with the Pickett memristor model, which is used here as a reference model. After that, the modified Biolek model is adjusted so that its basic relationships are made almost identical with these of the Pickett model. After several simulations of our new model, it is established that its behavior is similar to the realistic Pickett model but it operates without convergence problems and due to this, it is also appropriate for computer simulations. The modified memristor model proposed here is also compared with the Joglekar memristor model and several advantages of the new model are established. View Full-Text
Keywords: memristor; nonlinear ionic drift; modified Biolek window function; sinusoidal weighted window function; sensitivity threshold memristor; nonlinear ionic drift; modified Biolek window function; sinusoidal weighted window function; sensitivity threshold
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Mladenov, V.; Kirilov, S. A Nonlinear Drift Memristor Model with a Modified Biolek Window Function and Activation Threshold. Electronics 2017, 6, 77.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top