Next Article in Journal
Thermal-Sprayed Coatings on Bushing and Sleeve-Pipe Surfaces in Continuous Galvanizing Sinking Roller Production Line Applications
Next Article in Special Issue
Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach
Previous Article in Journal
Thermal Analysis of Tantalum Carbide-Hafnium Carbide Solid Solutions from Room Temperature to 1400 °C
Previous Article in Special Issue
The Effect of Deposition Parameters on the Growth Rate of Microcrystalline Diamond Powders Synthesized by HFCVD Method
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessArticle
Coatings 2017, 7(8), 112; https://doi.org/10.3390/coatings7080112

Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor

1
Department of Mechanical Engineering, National Central University, Taoyuan 32001, Taiwan
2
Department of Chemical Engineering, Chung Yuan Christian University, Taoyuan 32023, Taiwan
3
Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 31040, Taiwan
*
Author to whom correspondence should be addressed.
Received: 20 June 2017 / Revised: 28 July 2017 / Accepted: 29 July 2017 / Published: 31 July 2017
(This article belongs to the Special Issue Chemical Vapor Deposition)
View Full-Text   |   Download PDF [1927 KB, uploaded 2 August 2017]   |  

Abstract

A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 °C or 1238 °C; pressure: 100–300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms. View Full-Text
Keywords: MOCVD; mechanism; GaN; numerical verification; thin film; growth rate MOCVD; mechanism; GaN; numerical verification; thin film; growth rate
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Hu, C.-K.; Chen, C.-J.; Wei, T.-C.; Li, T.T.; Huang, C.-Y.; Chao, C.-L.; Lin, Y.-J. Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor. Coatings 2017, 7, 112.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Coatings EISSN 2079-6412 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top