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Nanomaterials 2017, 7(9), 275; doi:10.3390/nano7090275

Field Emission from Self-Catalyzed GaAs Nanowires

1
CNR-SPIN Salerno, via Giovanni Paolo II n.132, I-84084 Fisciano, Italy
2
Physics Department ‘E. R. Caianiello’, University of Salerno, via Giovanni Paolo II, I-84084 Fisciano, Italy
3
Department of Physical and Chemical Science, University of L’Aquila, via Vetoio, Coppito, I-67100 L’Aquila, Italy
4
Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland
*
Author to whom correspondence should be addressed.
Received: 23 August 2017 / Revised: 12 September 2017 / Accepted: 13 September 2017 / Published: 16 September 2017
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Abstract

We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10−7 A emitted from the tip of single nanowire, with a field enhancement factor β of up to 112 at anode-cathode distance d = 350 nm. A linear dependence of β on the anode-cathode distance was found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allowed for the detection of field emission from the nanowire sidewalls, which occurred with a reduced field enhancement factor and stability. This study further extends GaAs technology to vacuum electronics applications. View Full-Text
Keywords: field emission; semiconductor nanowires; gallium arsenide; Fowler-Nordheim theory; field enhancement factor field emission; semiconductor nanowires; gallium arsenide; Fowler-Nordheim theory; field enhancement factor
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Giubileo, F.; Di Bartolomeo, A.; Iemmo, L.; Luongo, G.; Passacantando, M.; Koivusalo, E.; Hakkarainen, T.V.; Guina, M. Field Emission from Self-Catalyzed GaAs Nanowires. Nanomaterials 2017, 7, 275.

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