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Nanomaterials 2017, 7(10), 286; doi:10.3390/nano7100286

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

1
College of Science, National University of Defense Technology, Changsha 410073, China
2
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China
3
College of Physics and Electronics, Central South University, Changsha 410073, China
*
Authors to whom correspondence should be addressed.
Received: 14 August 2017 / Revised: 18 September 2017 / Accepted: 18 September 2017 / Published: 22 September 2017
(This article belongs to the Special Issue Graphene and Nanotube Based Devices)
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Abstract

We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. View Full-Text
Keywords: graphene; WS2; Al2O3 gating substrate; field effect transistors graphene; WS2; Al2O3 gating substrate; field effect transistors
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Yang, H.; Qin, S.; Zheng, X.; Wang, G.; Tan, Y.; Peng, G.; Zhang, X. An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials. Nanomaterials 2017, 7, 286.

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