Special Issue "Graphene and Nanotube Based Devices"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 31 December 2017

Special Issue Editors

Guest Editor
Dr. Filippo Giubileo

CNR-SPIN Salerno, via Giovanni Paolo II, n.132, 84084 Fisciano (SA), Italy
E-Mail
Phone: +39 089 969329
Fax: +39 089 969658
Interests: Research activity is related to experimental condensed matter physics and electronics, in particular for what concerns quantum electronic transport in low dimensional materials, such as graphene, carbon nanotubes and semiconducting nanowires. Electronic properties of Graphene based field effect transistors. The role of contact resistance in graphene based devices. Field emission from nanostructures (graphene, CNTs, nanowires, nanoparticles). Transport properties in carbon nanostructures (aligned CNTs, buckypapers, etc.). Superconductivity for Energy. Quantum phenomena arising at the interface with superconducting materials. Proximity effect, Andreev reflection, tunneling spectroscopy in superconductors and heterostructures
Guest Editor
Prof. Antonio Di Bartolomeo

Physics Department “E. R. Caianiello”, University of Salerno, 84084 Fisciano, Italy
Website | E-Mail
Phone: +39 089 969189
Fax: +39 089 969658
Interests: optical and electrical properties of carbon nanotubes, graphene, 2D materials, and composite materials; graphene/semiconductor heterojunctions and their application as photodetectors, solar cells and chemical sensors. Van der Waals heterojunctions of 2D layered materials; field-effect and tunneling transistors; non-volatile memories; CMOS technologies; solid-state radiation detectors; field emission

Special Issue Information

Dear Colleagues,

Carbon nanostructures, such as carbon nanotubes (CNTs) and graphene, are innovative materials with amazing mechanical, electrical, optical, and thermal properties. Over the past two decades, they have been extensively studied and used in a variety of fundamental research and engineering applications. Carbon nanotubes and graphene, as well as their hybrid structures with nanoparticles, other 2D materials, polymers, etc., have been exploited in devices such as field effect transistors, photodiodes, solar cells, field emitters, supercapacitors, gas sensor, bio- and chemical sensors, and many others.

The aim of this Special Issue is to summarize recent progress in the fabrication, characterization and modeling of carbon nanotube and graphene based electronic devices, sensors and actuators. Potential topics include, but are not limited to:

  • Graphene and carbon nanotube field effect transistors
  • Graphene/semiconductor heterostructures
  • Van der Waals layered 2D heterostructures
  • Metal contacts on graphene and nanotubes
  • Composite materials
  • Field emission devices
  • Opto-electronic devices (photodiodes, phototransistors, LEDs)
  • Flexible electronics
  • Chemical and biological sensors
  • Actuators
  • Energy applications (batteries, capacitors, catalysis, solar cells)

Dr. Filippo Giubileo
Prof. Antonio Di Bartolomeo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Graphene
  • Carbon Nanotubes
  • Carbon heterostructures
  • Field effect transistors
  • Contact resistance
  • Photodiodes
  • Sensors
  • Actuators
  • Composite materials
  • 1D and 2D materials

Published Papers (4 papers)

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Research

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Open AccessArticle Optimization of the Fano Resonance Lineshape Based on Graphene Plasmonic Hexamer in Mid-Infrared Frequencies
Nanomaterials 2017, 7(9), 238; doi:10.3390/nano7090238
Received: 25 July 2017 / Revised: 18 August 2017 / Accepted: 22 August 2017 / Published: 26 August 2017
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Abstract
In this article, the lineshape of Fano-like resonance of graphene plasmonic oligomers is investigated as a function of the parameters of the nanostructures, such as disk size, chemical potential and electron momentum relaxation time in mid-infrared frequencies. Also, the mechanism of the optimization
[...] Read more.
In this article, the lineshape of Fano-like resonance of graphene plasmonic oligomers is investigated as a function of the parameters of the nanostructures, such as disk size, chemical potential and electron momentum relaxation time in mid-infrared frequencies. Also, the mechanism of the optimization is discussed. Furthermore, the environmental index sensing effect of the proposed structure is revealed, and a figure of merit of 25.58 is achieved with the optimized graphene oligomer. The proposed nanostructure could find applications in the fields of chemical or biochemical sensing. Full article
(This article belongs to the Special Issue Graphene and Nanotube Based Devices)
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Open AccessArticle Wettability Investigations and Wet Transfer Enhancement of Large-Area CVD-Graphene on Aluminum Nitride
Nanomaterials 2017, 7(8), 226; doi:10.3390/nano7080226
Received: 31 July 2017 / Revised: 14 August 2017 / Accepted: 15 August 2017 / Published: 18 August 2017
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Abstract
The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance
[...] Read more.
The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance regarding mass-loading effects. We report on an optimization of the commonly used wet transfer technique for large-area graphene, grown via chemical vapor deposition, onto aluminum nitride (AlN), which is mainly used as an active, piezoelectric material for acoustic devices. Today, graphene wet transfer is well-engineered for silicon dioxide (SiO2). Investigations on AlN substrates reveal highly different surface properties compared to SiO2 regarding wettability, which strongly influences the quality of transferred graphene monolayers. Both physical and chemical effects of a plasma treatment of AlN surfaces change wettability and avoid large-scale cracks in the transferred graphene sheet during desiccation. Spatially-resolved Raman spectroscopy reveals a strong strain and doping dependence on AlN plasma pretreatments correlating with the electrical conductivity of graphene. In our work, we achieved transferred crack-free large-area (40 × 40 mm2) graphene monolayers with sheet resistances down to 350 Ω/sq. These achievements make graphene more powerful as an eco-friendly and cheaper replacement for conventional electrode materials used in radio frequency resonator devices. Full article
(This article belongs to the Special Issue Graphene and Nanotube Based Devices)
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Open AccessFeature PaperArticle I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
Nanomaterials 2017, 7(7), 158; doi:10.3390/nano7070158
Received: 9 June 2017 / Revised: 15 June 2017 / Accepted: 22 June 2017 / Published: 27 June 2017
Cited by 1 | PDF Full-text (2698 KB) | HTML Full-text | XML Full-text
Abstract
We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5A/W. We show
[...] Read more.
We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions. Full article
(This article belongs to the Special Issue Graphene and Nanotube Based Devices)
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Other

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Open AccessBrief Report An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
Nanomaterials 2017, 7(10), 286; doi:10.3390/nano7100286
Received: 14 August 2017 / Revised: 18 September 2017 / Accepted: 18 September 2017 / Published: 22 September 2017
PDF Full-text (3280 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior
[...] Read more.
We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. Full article
(This article belongs to the Special Issue Graphene and Nanotube Based Devices)
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