Next Article in Journal
Rapamycin Loaded Solid Lipid Nanoparticles as a New Tool to Deliver mTOR Inhibitors: Formulation and in Vitro Characterization
Next Article in Special Issue
Characteristic Evaluation of Graphene Oxide for Bisphenol A Adsorption in Aqueous Solution
Previous Article in Journal
Biosynthesis of Metal Nanoparticles: Novel Efficient Heterogeneous Nanocatalysts
Article Menu

Export Article

Open AccessArticle
Nanomaterials 2016, 6(5), 86; doi:10.3390/nano6050086

Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance

Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, USA
*
Author to whom correspondence should be addressed.
Academic Editors: Ho Won Jang and Soo Young Kim
Received: 16 February 2016 / Revised: 14 April 2016 / Accepted: 3 May 2016 / Published: 10 May 2016
(This article belongs to the Special Issue 2D Nanomaterials: Graphene and Beyond Graphene)
View Full-Text   |   Download PDF [4376 KB, uploaded 10 May 2016]   |  

Abstract

This work proposes a novel geometry field effect transistor with graphene as a channel—graphene field-effect transistor (GFET), having a hybrid contact that consists of an ohmic source/drain and its extended part towards the gate, which is capacitively coupled to the channel. The ohmic contacts are used for direct current (DC) biasing, whereas their capacitive extension reduces access region length and provides the radio frequency (RF) signal a low impedance path. Minimization of the access region length, along with the paralleling of ohmic contact’s resistance and resistive part of capacitively coupled contact’s impedance, lower the overall source/drain resistance, which results in an increase in current gain cut-off frequency, fT. The DC and high-frequency characteristics of the two chosen conventional baseline GFETs, and their modified versions with proposed hybrid contacts, have been extensively studied, compared, and analyzed using numerical and analytical techniques. View Full-Text
Keywords: graphene field-effect transistor (GFET); current-gain cut-off frequency; access resistance; capacitive coupling; radio frequency graphene field-effect transistor (GFET); current-gain cut-off frequency; access resistance; capacitive coupling; radio frequency
Figures

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Al-Amin, C.; Karabiyik, M.; Vabbina, P.K.; Sinha, R.; Pala, N. Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance. Nanomaterials 2016, 6, 86.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top