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Nanomaterials 2016, 6(1), 16;

Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, China
Author to whom correspondence should be addressed.
Academic Editors: Krasimir Vasilev and Melanie Ramiasa
Received: 30 November 2015 / Revised: 21 December 2015 / Accepted: 8 January 2016 / Published: 13 January 2016
(This article belongs to the Special Issue Plasma Nanoengineering and Nanofabrication)
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ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW–based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW–based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell. View Full-Text
Keywords: resistive switching; plasma treatment; ZnO nanowires; self-rectification resistive switching; plasma treatment; ZnO nanowires; self-rectification

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Lai, Y.; Qiu, W.; Zeng, Z.; Cheng, S.; Yu, J.; Zheng, Q. Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory. Nanomaterials 2016, 6, 16.

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