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Nanomaterials 2016, 6(1), 4; doi:10.3390/nano6010004

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

1
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
2
Physics Department, Hindu College, University of Delhi, Delhi 110007, India
3
Physics Department, Daulat Ram College, University of Delhi, Delhi 110007, India
4
School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), Brisbane 4000, Australia
5
Plasma Nanoscience Laboratories, Commonwealth Scientific and Industrial Research Organisation, P.O. Box 218, Lindfield 2070, Australia
6
Plasma Nanoscience, School of Physics, The University of Sydney, Sydney 2006, Australia
*
Author to whom correspondence should be addressed.
Academic Editors: Krasimir Vasilev and Melanie Ramiasa
Received: 12 October 2015 / Revised: 14 November 2015 / Accepted: 17 December 2015 / Published: 29 December 2015
(This article belongs to the Special Issue Plasma Nanoengineering and Nanofabrication)
View Full-Text   |   Download PDF [3433 KB, uploaded 29 December 2015]   |  

Abstract

The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III–V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well. View Full-Text
Keywords: III–V semiconductors; nanofabrication; dense plasma focus; rapid thermal annealing; photoluminescence; transmittance III–V semiconductors; nanofabrication; dense plasma focus; rapid thermal annealing; photoluminescence; transmittance
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Mangla, O.; Roy, S.; Ostrikov, K.K. Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances. Nanomaterials 2016, 6, 4.

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