A Thermal Model for Carbon Nanotube Interconnects
AbstractIn this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters.
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Mohsin, K.M.; Srivastava, A.; Sharma, A.K.; Mayberry, C. A Thermal Model for Carbon Nanotube Interconnects. Nanomaterials 2013, 3, 229-241.
Mohsin KM, Srivastava A, Sharma AK, Mayberry C. A Thermal Model for Carbon Nanotube Interconnects. Nanomaterials. 2013; 3(2):229-241.Chicago/Turabian Style
Mohsin, Kaji M.; Srivastava, Ashok; Sharma, Ashwani K.; Mayberry, Clay. 2013. "A Thermal Model for Carbon Nanotube Interconnects." Nanomaterials 3, no. 2: 229-241.