Nanomaterials 2013, 3(2), 229-241; doi:10.3390/nano3020229
Article

A Thermal Model for Carbon Nanotube Interconnects

1email, 1,* email, 2email and 2email
Received: 11 March 2013; in revised form: 10 April 2013 / Accepted: 12 April 2013 / Published: 26 April 2013
(This article belongs to the Special Issue CNT based Nanomaterials)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters.
Keywords: SWCNT; VLSI interconnect; Joule heating; scattering
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MDPI and ACS Style

Mohsin, K.M.; Srivastava, A.; Sharma, A.K.; Mayberry, C. A Thermal Model for Carbon Nanotube Interconnects. Nanomaterials 2013, 3, 229-241.

AMA Style

Mohsin KM, Srivastava A, Sharma AK, Mayberry C. A Thermal Model for Carbon Nanotube Interconnects. Nanomaterials. 2013; 3(2):229-241.

Chicago/Turabian Style

Mohsin, Kaji M.; Srivastava, Ashok; Sharma, Ashwani K.; Mayberry, Clay. 2013. "A Thermal Model for Carbon Nanotube Interconnects." Nanomaterials 3, no. 2: 229-241.


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