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Appl. Sci. 2018, 8(5), 806; https://doi.org/10.3390/app8050806

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

1
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
3
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
*
Authors to whom correspondence should be addressed.
Received: 17 April 2018 / Revised: 12 May 2018 / Accepted: 15 May 2018 / Published: 17 May 2018
(This article belongs to the Special Issue Thin-Film Transistors)
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Abstract

In this paper, a high-k metal-oxide film (ZrO2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs) with high-k ZrO2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO2 dielectric exhibit a saturation mobility up to 12.7 cm2 V−1 s−1, and an on/off ratio as high as 7.6 × 105. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s. View Full-Text
Keywords: thin-film transistors; high dielectric constant; solution process; bias stability thin-film transistors; high dielectric constant; solution process; bias stability
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Zhou, S.; Fang, Z.; Ning, H.; Cai, W.; Zhu, Z.; Wei, J.; Lu, X.; Yuan, W.; Yao, R.; Peng, J. Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator. Appl. Sci. 2018, 8, 806.

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