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Appl. Sci. 2016, 6(8), 214; doi:10.3390/app6080214

Sharp Switching Characteristics of Single Electron Transistor with Discretized Charge Input

Department of Engineering Science, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Author to whom correspondence should be addressed.
Academic Editor: Greg Snider
Received: 7 May 2016 / Revised: 20 July 2016 / Accepted: 22 July 2016 / Published: 29 July 2016
(This article belongs to the Special Issue Applied Single-Electron Transistors)
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Abstract

For the low-power consumption analog and digital circuit applications based on a single-electron transistor, enhancement of its switching performance is required. Our previous works analytically and numerically demonstrated that a discretized charge input device, which comprised a tunnel junction and two capacitors, improved the gain characteristics of single-electron devices. We report the design and fabrication of an aluminum-based single-electron transistor having the discretized charge input function. Flat-plate and interdigital geometries were employed for adjusting capacitances of grounded and the coupling capacitors. The sample exhibited clear switching on input-output characteristics at the finite temperature. View Full-Text
Keywords: input discretizer; Coulomb blockade input discretizer; Coulomb blockade
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Takiguchi, M.; Shimada, H.; Mizugaki, Y. Sharp Switching Characteristics of Single Electron Transistor with Discretized Charge Input. Appl. Sci. 2016, 6, 214.

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