Next Article in Journal
Simulation of a Narrowband Power Line Communications System over Medium Voltage
Next Article in Special Issue
Relationship between ISO 230-2/-6 Test Results and Positioning Accuracy of Machine Tools Using LaserTRACER
Previous Article in Journal
A Pre-Scheduling Mechanism in LTE Handover for Streaming Video
Previous Article in Special Issue
Optimization of Minimum Quantity Lubricant Conditions and Cutting Parameters in Hard Milling of AISI H13 Steel
Article Menu

Export Article

Open AccessArticle
Appl. Sci. 2016, 6(3), 89; doi:10.3390/app6030089

Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers

Department of Mechanical Engineering, National CHIN-YI University of Technology No.57, Sec. 2, Zhongshan Rd., Taiping Dist., Taichung 41170, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Raed Abu-Reziq
Received: 31 December 2015 / Revised: 26 February 2016 / Accepted: 1 March 2016 / Published: 22 March 2016
(This article belongs to the Special Issue Selected Papers from the 2015 International Conference on Inventions)
View Full-Text   |   Download PDF [2409 KB, uploaded 22 March 2016]   |  

Abstract

This study focuses on the development of a novel polishing pad for SiC wafers. Fe and Al2O3 particles were impregnated in a polyurethane matrix, thus forming a fixed abrasive polishing pad. Four types of pads with different compositions of Fe and Al2O3 were fabricated. A combination of loose and fixed polishing methods was used for polishing with the fabricated pads and was investigated to improve the polishing process. The surface characteristics of the polished SiC wafer and the SiC removal rate during polishing using the designed pads were examined and compared with those for SiC polished with a conventional polyurethane pad. Experimental results showed that the removal rate for SiC in the case of polishing with the pads consisting 1 wt % Fe and 3 wt % Al2O3 particles was approximately 73% higher than that observed when polishing using the conventional polyurethane polishing pad. Additionally, the surface roughness of the resulting SiC wafers after polishing with the Fe and Al2O3-impregnated pads was identical to that when using the conventional polyurethane pad, without any surface damage. The results indicated that the Fe and Al2O3-impregnated pads can be effectively used for SiC wafer polishing. When the proposed process was employed for polishing single-crystal SiC, both the polishing time and cost were reduced. This novel design can facilitate the extensive use of single-crystal SiC wafers in the future. View Full-Text
Keywords: chemical mechanical polishing; single-crystal silicon carbide; polishing pad chemical mechanical polishing; single-crystal silicon carbide; polishing pad
Figures

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Ho, J.-K.; Huang, C.-Y.; Tsai, M.-Y.; Tsai, C.-C. Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers. Appl. Sci. 2016, 6, 89.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Appl. Sci. EISSN 2076-3417 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top