Next Article in Journal
A Notched Long-Period Fiber Grating Magnetic Field Sensor Based on Nanoparticle Magnetic Fluid
Previous Article in Journal
Auralization of Accelerating Passenger Cars Using Spectral Modeling Synthesis
Article Menu

Export Article

Open AccessFeature PaperReview
Appl. Sci. 2016, 6(1), 7; doi:10.3390/app6010007

Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

1,2
and
2,*
1
State Key Laboratory of Application-Specific Integrated Circuits and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Hung-Yu Wang
Received: 1 December 2015 / Revised: 18 December 2015 / Accepted: 21 December 2015 / Published: 26 December 2015
View Full-Text   |   Download PDF [6925 KB, uploaded 28 December 2015]   |  

Abstract

This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent endurance and multi-bit storage, outperforming the conventional floating-gate flash memory. Such high performance molecular memory will lead to promising on-chip memory and future portable/wearable electronics applications. View Full-Text
Keywords: molecular electronics; redox-active molecules; non-volatile memory; high density; high endurance molecular electronics; redox-active molecules; non-volatile memory; high density; high endurance
Figures

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Supplementary material

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Zhu, H.; Li, Q. Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules. Appl. Sci. 2016, 6, 7.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Appl. Sci. EISSN 2076-3417 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top