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Crystals 2017, 7(7), 198; doi:10.3390/cryst7070198

Synthesis Methods of Two-Dimensional MoS2: A Brief Review

1
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
2
Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden
3
High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 10029, China
4
Electronics Material and Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden
*
Authors to whom correspondence should be addressed.
Academic Editor: Filippo Giannazzo
Received: 19 May 2017 / Revised: 20 June 2017 / Accepted: 28 June 2017 / Published: 1 July 2017
(This article belongs to the Special Issue Integration of 2D Materials for Electronics Applications)
View Full-Text   |   Download PDF [2571 KB, uploaded 1 July 2017]   |  

Abstract

Molybdenum disulfide (MoS2) is one of the most important two-dimensional materials after graphene. Monolayer MoS2 has a direct bandgap (1.9 eV) and is potentially suitable for post-silicon electronics. Among all atomically thin semiconductors, MoS2’s synthesis techniques are more developed. Here, we review the recent developments in the synthesis of hexagonal MoS2, where they are categorized into top-down and bottom-up approaches. Micromechanical exfoliation is convenient for beginners and basic research. Liquid phase exfoliation and solutions for chemical processes are cheap and suitable for large-scale production; yielding materials mostly in powders with different shapes, sizes and layer numbers. MoS2 films on a substrate targeting high-end nanoelectronic applications can be produced by chemical vapor deposition, compatible with the semiconductor industry. Usually, metal catalysts are unnecessary. Unlike graphene, the transfer of atomic layers is omitted. We especially emphasize the recent advances in metalorganic chemical vapor deposition and atomic layer deposition, where gaseous precursors are used. These processes grow MoS2 with the smallest building-blocks, naturally promising higher quality and controllability. Most likely, this will be an important direction in the field. Nevertheless, today none of those methods reproducibly produces MoS2 with competitive quality. There is a long way to go for MoS2 in real-life electronic device applications. View Full-Text
Keywords: Molybdenum disulfide; transition metal dichalcogenide; two-dimensional materials; micromechanical exfoliation; chemical vapor deposition. Molybdenum disulfide; transition metal dichalcogenide; two-dimensional materials; micromechanical exfoliation; chemical vapor deposition.
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Sun, J.; Li, X.; Guo, W.; Zhao, M.; Fan, X.; Dong, Y.; Xu, C.; Deng, J.; Fu, Y. Synthesis Methods of Two-Dimensional MoS2: A Brief Review. Crystals 2017, 7, 198.

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