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Micromachines 2015, 6(10), 1534-1545; doi:10.3390/mi6101437

Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

1
Instituto de Engenharia de Sistemas de Computadores–Microsystems and Nanotechnology (INESC–MN), Rua Alves Redol, Lisboa 1000-029, Portugal
2
Microelectromechanical Systems Research Unit (CMEMS-UMinho), Universidade do Minho, Campus de Azurem, Guimarães 4800-058, Portugal
3
Departamento de Física–Instituto Superior Técnico–Universidade de Lisboa, Av. Rovisco Pais, Lisboa 1000, Portugal
*
Author to whom correspondence should be addressed.
Academic Editor: Joost Lötters
Received: 1 August 2015 / Revised: 6 October 2015 / Accepted: 9 October 2015 / Published: 15 October 2015
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Abstract

In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 µm were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane. View Full-Text
Keywords: isopropanol evaporation; isopropanol availability; silicon wet etching; microloading effect isopropanol evaporation; isopropanol availability; silicon wet etching; microloading effect
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Monteiro, T.S.; Kastytis, P.; Gonçalves, L.M.; Minas, G.; Cardoso, S. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation. Micromachines 2015, 6, 1534-1545.

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