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Materials 2016, 9(5), 315; doi:10.3390/ma9050315

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

1
State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
2
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
3
Solid-State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, Uppsala 75121, Sweden
*
Author to whom correspondence should be addressed.
Academic Editor: Dinesh Agrawal
Received: 29 February 2016 / Revised: 19 April 2016 / Accepted: 21 April 2016 / Published: 27 April 2016
(This article belongs to the Special Issue Microwave Materials Processing)
View Full-Text   |   Download PDF [2498 KB, uploaded 27 April 2016]   |  

Abstract

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. View Full-Text
Keywords: microwave annealing; Schottky barrier height; MOSFETs; dopant segregation; low temperature; diode microwave annealing; Schottky barrier height; MOSFETs; dopant segregation; low temperature; diode
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Fu, C.; Zhou, X.; Wang, Y.; Xu, P.; Xu, M.; Wu, D.; Luo, J.; Zhao, C.; Zhang, S.-L. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing. Materials 2016, 9, 315.

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