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Materials 2015, 8(5), 2769-2781; doi:10.3390/ma8052769

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

1
Department of Mechanical Engineering, National Kaohsiung University of Applied Science, No. 415 Chien Kung Road, Kaohsiung 807, Taiwan
2
Department of Electro-Optical Engineering, Southern Taiwan University, No. 1, Nan-Tai Street, Yungkang Dist., Tainan City 710, Taiwan
3
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700 Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Received: 27 March 2015 / Revised: 9 May 2015 / Accepted: 12 May 2015 / Published: 21 May 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
View Full-Text   |   Download PDF [1424 KB, uploaded 21 May 2015]   |  

Abstract

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power. View Full-Text
Keywords: IGZO; co-sputtering method; deposition power; SIMS IGZO; co-sputtering method; deposition power; SIMS
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Hsu, C.-M.; Tzou, W.-C.; Yang, C.-F.; Liou, Y.-J. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method. Materials 2015, 8, 2769-2781.

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