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Materials 2015, 8(4), 1704-1713; doi:10.3390/ma8041704

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

1
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan
2
Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan
3
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan
4
Department of Electrical Engineering, Lee-Ming Institute of Technology, New Taipei City 243, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Martin Frank
Received: 7 January 2015 / Revised: 13 March 2015 / Accepted: 26 March 2015 / Published: 13 April 2015
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Abstract

This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. View Full-Text
Keywords: indium gallium zinc oxide (IGZO); thin film transistors (TFTs); passivation layer; Teflon; SiO2 indium gallium zinc oxide (IGZO); thin film transistors (TFTs); passivation layer; Teflon; SiO2
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Fan, C.-L.; Shang, M.-C.; Li, B.-J.; Lin, Y.-Z.; Wang, S.-J.; Lee, W.-D.; Hung, B.-R. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process. Materials 2015, 8, 1704-1713.

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