Hybrid Integrated Platforms for Silicon Photonics
Abstract
:1. Introduction
2. O2 Plasma-Assisted/SiO2 Covalent Direct Bonding
2.1. Bonding process flow and mechanism
2.2. Solutions to outgassing in hydrophilic bonding
2.3. Wafer-scale integration
2.4. Epitaxial transfer quality characterization in wafer-scale integration
3. Adhesive Wafer Bonding Technology
Electrical properties | |
Dielectric constant | 2.5 at 10 GHz |
Dissipation factor | 0.002 at 10 GHz |
Breakdown voltage | 5.3 MV/cm |
Optical properties | |
Refractive index | 1.543 at 1.55 µm |
Optical loss | <0.1 dB at 1.55 µm |
Mechanical properties | |
Tensile modulus | 2.9 GPa |
Intrinsic stress | 28 MPa |
Tensile strength | 89 MPa |
Poisson ratio | 0.34 |
Shrinkage upon cure | 0.05 |
Thermal properties | |
Glass transition temperature | >350 °C |
Thermal conductivity | 0.29 W/mK |
Thermal expansion coefficient | 42 ppm/K |
Other properties | |
Planarization | Very good |
Moisture uptake | Very low |
3.1. DVS-BCB adhesive die-to-wafer bonding
4. III-V-on-Si Photonic Device Platforms
4.1. Hybrid silicon platform
4.2. Heterogeneous III-V/SOI platform
4. Conclusions
Bonding characteristic | Molecule bonding | Adhesive bonding |
---|---|---|
Bonding strength (<400 °C) | High | High |
Process complexity | Medium | Low |
Tolerance to surface defects, roughness and contamination | Low | High−medium |
Bonding-induced strain | Low | Low |
Integration proximity | High | High–medium |
Intrinsic outgassing problem | High | Low |
Uniformity | High | High–medium |
Stability | High | High |
Scalability | High | High |
Acknowledgements
References and Notes
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Liang, D.; Roelkens, G.; Baets, R.; Bowers, J.E. Hybrid Integrated Platforms for Silicon Photonics. Materials 2010, 3, 1782-1802. https://doi.org/10.3390/ma3031782
Liang D, Roelkens G, Baets R, Bowers JE. Hybrid Integrated Platforms for Silicon Photonics. Materials. 2010; 3(3):1782-1802. https://doi.org/10.3390/ma3031782
Chicago/Turabian StyleLiang, Di, Gunther Roelkens, Roel Baets, and John E. Bowers. 2010. "Hybrid Integrated Platforms for Silicon Photonics" Materials 3, no. 3: 1782-1802. https://doi.org/10.3390/ma3031782