Materials 2010, 3(3), 1782-1802; doi:10.3390/ma3031782
Review

Hybrid Integrated Platforms for Silicon Photonics

Di Liang 1,* email, Gunther Roelkens 2 email, Roel Baets 2 email and John E. Bowers 1 email
1 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA 2 Photonics Research Group, IMEC - Ghent University, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium
* Author to whom correspondence should be addressed.
Received: 1 February 2010; in revised form: 3 March 2010 / Accepted: 11 March 2010 / Published: 12 March 2010
(This article belongs to the Special Issue Inorganic-Organic Hybrid Materials)
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Abstract: A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.
Keywords: hybrid integration; wafer bonding; silicon photonics

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Cite This Article

MDPI and ACS Style

Liang, D.; Roelkens, G.; Baets, R.; Bowers, J.E. Hybrid Integrated Platforms for Silicon Photonics. Materials 2010, 3, 1782-1802.

AMA Style

Liang D, Roelkens G, Baets R, Bowers JE. Hybrid Integrated Platforms for Silicon Photonics. Materials. 2010; 3(3):1782-1802.

Chicago/Turabian Style

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E. 2010. "Hybrid Integrated Platforms for Silicon Photonics." Materials 3, no. 3: 1782-1802.

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