Materials 2010, 3(3), 1782-1802; doi:10.3390/ma3031782

Hybrid Integrated Platforms for Silicon Photonics

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Received: 1 February 2010; in revised form: 3 March 2010 / Accepted: 11 March 2010 / Published: 12 March 2010
(This article belongs to the Special Issue Inorganic-Organic Hybrid Materials)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.
Keywords: hybrid integration; wafer bonding; silicon photonics
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MDPI and ACS Style

Liang, D.; Roelkens, G.; Baets, R.; Bowers, J.E. Hybrid Integrated Platforms for Silicon Photonics. Materials 2010, 3, 1782-1802.

AMA Style

Liang D, Roelkens G, Baets R, Bowers JE. Hybrid Integrated Platforms for Silicon Photonics. Materials. 2010; 3(3):1782-1802.

Chicago/Turabian Style

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E. 2010. "Hybrid Integrated Platforms for Silicon Photonics." Materials 3, no. 3: 1782-1802.

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