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Materials 2017, 10(4), 429; doi:10.3390/ma10040429

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer

School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK
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Academic Editor: Pedro Barquinha
Received: 27 February 2017 / Revised: 15 April 2017 / Accepted: 17 April 2017 / Published: 20 April 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
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Abstract

Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO2 have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at room temperature for the first time. A maximum transmittance of about 80% has been achieved in the visible light range. The transparent TFTs show a low operation voltage of 1.5 V due to the large EDL capacitance (0.3 µF/cm2 at 20 Hz). The devices exhibit a good performance with a low subthreshold swing of 130 mV/dec and a high on-off ratio > 105. Several tests have also been done to investigate the influences of light irradiation and bias stress. Our results suggest that such transistors might have potential applications in battery-powered transparent electron devices. View Full-Text
Keywords: electric-double-layer (EDL); radio frequency (RF) magnetron sputtered SiO2; transparent thin-film transistors (TFTs) electric-double-layer (EDL); radio frequency (RF) magnetron sputtered SiO2; transparent thin-film transistors (TFTs)
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Cai, W.; Ma, X.; Zhang, J.; Song, A. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer. Materials 2017, 10, 429.

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