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Materials 2017, 10(2), 126; doi:10.3390/ma10020126

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
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Academic Editor: Pedro Barquinha
Received: 27 September 2016 / Revised: 28 December 2016 / Accepted: 24 January 2017 / Published: 4 February 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
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Abstract

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on–off current ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of −5 V under 290 nm illumination. View Full-Text
Keywords: magnesium zinc oxide; ultraviolet; thin-film transistor; phototransistor magnesium zinc oxide; ultraviolet; thin-film transistor; phototransistor
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MDPI and ACS Style

Li, J.-Y.; Chang, S.-P.; Hsu, M.-H.; Chang, S.-J. High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering. Materials 2017, 10, 126.

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