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Materials 2017, 10(1), 51; doi:10.3390/ma10010051

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
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Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Received: 21 November 2016 / Revised: 16 December 2016 / Accepted: 4 January 2017 / Published: 10 January 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
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Abstract

Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance. View Full-Text
Keywords: thin film transistors; inkjet printing; a-IGZO; silver ink thin film transistors; inkjet printing; a-IGZO; silver ink
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MDPI and ACS Style

Ning, H.; Chen, J.; Fang, Z.; Tao, R.; Cai, W.; Yao, R.; Hu, S.; Zhu, Z.; Zhou, Y.; Yang, C.; Peng, J. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors. Materials 2017, 10, 51.

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