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Energies 2017, 10(4), 452; doi:10.3390/en10040452

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

1
Power Electronics, Machines and Control Group, University of Nottingham, Nottingham NG7 2RD, UK
2
Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, Italy
3
Emerging Technologies and Materials Group, Newcastle University, Newcastle upon Tyne NE1 7RU, UK
*
Author to whom correspondence should be addressed.
Academic Editor: Tom Gregorkiewicz
Received: 13 January 2017 / Revised: 20 March 2017 / Accepted: 21 March 2017 / Published: 1 April 2017
(This article belongs to the Special Issue Semiconductor Power Devices)
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Abstract

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown. View Full-Text
Keywords: avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Fayyaz, A.; Romano, G.; Urresti, J.; Riccio, M.; Castellazzi, A.; Irace, A.; Wright, N. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies 2017, 10, 452.

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