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11796 KiB

Open AccessFeature PaperArticle

Semiconductor Devices in Solid-State/Hybrid Circuit Breakers: Current Status and Future Trends

by Chunyang Gu, Pat Wheeler, Alberto Castellazzi, Alan J. Watson and Francis Effah

Energies 2017, 10(4), 495; https://doi.org/10.3390/en10040495 - 06 Apr 2017

Cited by 35 | Viewed by 11436

Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well as hybrid circuit [...] Read more.

Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well as hybrid circuit breakers (HCBs) with semiconductor power devices. A few novel SSCB and HCB concepts are described in this paper, including advantage and limitation discussions of wide-band-gap (WBG) devices in basic SSCB/HCB configuration by simulation and 360 V/150 A experimental verifications. Novel SSCB/HCB configurations combining ultra-fast switching and high efficiency at normal operation are proposed. Different types of power devices are installed in these circuit breakers to achieve adequate performance. Challenges and future trends of semiconductor power devices in SSCB/HCB with different voltage/power levels and special performance requirements are clarified. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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16000 KiB

Open AccessFeature PaperArticle

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

by Asad Fayyaz, Gianpaolo Romano, Jesus Urresti, Michele Riccio, Alberto Castellazzi, Andrea Irace and Nick Wright

Energies 2017, 10(4), 452; https://doi.org/10.3390/en10040452 - 01 Apr 2017

Cited by 35 | Viewed by 10135

Abstract

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power [...] Read more.

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (E_AV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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1094 KiB

Open AccessArticle

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

by Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi, Terry Chien, Max Chen and Florin Udrea

Energies 2017, 10(3), 407; https://doi.org/10.3390/en10030407 - 21 Mar 2017

Cited by 22 | Viewed by 6016

Abstract

With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility [...] Read more.

With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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3059 KiB

Open AccessFeature PaperArticle

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

by Nick Baker, Haoze Luo and Francesco Iannuzzo

Energies 2017, 10(3), 384; https://doi.org/10.3390/en10030384 - 18 Mar 2017

Cited by 29 | Viewed by 6934

Abstract

In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage [...] Read more.

In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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6035 KiB

Open AccessArticle

A New Vertical JFET Power Device for Harsh Radiation Environments

by Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, Xavier Jordà, Xavier Perpiñà, David Quirion, Lucia Ré, Miguel Ullán and Miquel Vellvehí

Energies 2017, 10(2), 256; https://doi.org/10.3390/en10020256 - 20 Feb 2017

Cited by 8 | Viewed by 5615

Abstract

An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for [...] Read more.

An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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2939 KiB

Open AccessArticle

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

by Po-Chien Chou, Szu-Hao Chen, Ting-En Hsieh, Stone Cheng, Jesús A. Del Alamo and Edward Yi Chang

Energies 2017, 10(2), 233; https://doi.org/10.3390/en10020233 - 16 Feb 2017

Cited by 23 | Viewed by 6935

Abstract

This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause [...] Read more.

This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: V_DS = 0 V, off, and off (cascode-connection) states. Changes of direct current (DC) figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk) and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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4738 KiB

Open AccessArticle

On-Line Junction Temperature Monitoring of Switching Devices with Dynamic Compact Thermal Models Extracted with Model Order Reduction

by Fabio Di Napoli, Alessandro Magnani, Marino Coppola, Pierluigi Guerriero, Vincenzo D’Alessandro, Lorenzo Codecasa, Pietro Tricoli and Santolo Daliento

Energies 2017, 10(2), 189; https://doi.org/10.3390/en10020189 - 08 Feb 2017

Cited by 34 | Viewed by 4839

Abstract

Residual lifetime estimation has gained a key point among the techniques that improve the reliability and the efficiency of power converters. The main cause of failures are the junction temperature cycles exhibited by switching devices during their normal operation; therefore, reliable power converter [...] Read more.

Residual lifetime estimation has gained a key point among the techniques that improve the reliability and the efficiency of power converters. The main cause of failures are the junction temperature cycles exhibited by switching devices during their normal operation; therefore, reliable power converter lifetime estimation requires the knowledge of the junction temperature time profile. Since on-line dynamic temperature measurements are extremely difficult, in this work an innovative real-time monitoring strategy is proposed, which is capable of estimating the junction temperature profile from the measurement of the dissipated powers through an accurate and compact thermal model of the whole power module. The equations of this model can be easily implemented inside a FPGA, exploiting the control architecture already present in modern power converters. Experimental results on an IGBT power module demonstrate the reliability of the proposed method. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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4325 KiB

Open AccessFeature PaperArticle

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

by Matteo Meneghini, Oliver Hilt, Joachim Wuerfl and Gaudenzio Meneghesso

Energies 2017, 10(2), 153; https://doi.org/10.3390/en10020153 - 25 Jan 2017

Cited by 117 | Viewed by 15724

Abstract

GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and [...] Read more.

GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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2814 KiB

Open AccessEditor’s ChoiceArticle

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

by Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa and Jun Suda

Energies 2016, 9(11), 908; https://doi.org/10.3390/en9110908 - 03 Nov 2016

Cited by 32 | Viewed by 7469

Abstract

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are [...] Read more.

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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Review

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7760 KiB

Open AccessFeature PaperReview

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

by Sayan Seal and Homer Alan Mantooth

Energies 2017, 10(3), 341; https://doi.org/10.3390/en10030341 - 10 Mar 2017

Cited by 63 | Viewed by 13055

Abstract

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology [...] Read more.

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed. Full article

(This article belongs to the Special Issue Semiconductor Power Devices)

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