On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs
AbstractWith Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed. View Full-Text
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Efthymiou, L.; Camuso, G.; Longobardi, G.; Chien, T.; Chen, M.; Udrea, F. On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies 2017, 10, 407.
Efthymiou L, Camuso G, Longobardi G, Chien T, Chen M, Udrea F. On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies. 2017; 10(3):407.Chicago/Turabian Style
Efthymiou, Loizos; Camuso, Gianluca; Longobardi, Giorgia; Chien, Terry; Chen, Max; Udrea, Florin. 2017. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs." Energies 10, no. 3: 407.
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