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A High Isolation Series-Shunt RF MEMS Switch
Department of Physics, Nanjing University, Nanjing, 210093, China
National Key Lab. of Monolithic Integrated Circuits and Modules, Nanjing, 210016, China
Nanjing Electronic Devices Institute, Nanjing, China
* Author to whom correspondence should be addressed.
Received: 13 May 2009; in revised form: 20 May 2009 / Accepted: 22 May 2009 / Published: 5 June 2009
Abstract: This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.
Keywords: series-shunt; RF MEMS switch; metal-contact; electrical model
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Cite This Article
MDPI and ACS Style
Yu, Y.-W.; Zhu, J.; Jia, S.-X.; Shi, Y. A High Isolation Series-Shunt RF MEMS Switch. Sensors 2009, 9, 4455-4464.
Yu Y-W, Zhu J, Jia S-X, Shi Y. A High Isolation Series-Shunt RF MEMS Switch. Sensors. 2009; 9(6):4455-4464.
Yu, Yuan-Wei; Zhu, Jian; Jia, Shi-Xing; Shi, Yi. 2009. "A High Isolation Series-Shunt RF MEMS Switch." Sensors 9, no. 6: 4455-4464.