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Sensors 2009, 9(6), 4366-4379; doi:10.3390/s90604366

Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

Intel Research Israel, Intel Electronics, Jerusalem 91031, Israel
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Received: 25 March 2009 / Revised: 20 May 2009 / Accepted: 25 May 2009 / Published: 4 June 2009
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Abstract

Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly sensitive, specific, selective and reliable biosensors. This paper presents the fabrication of a sensitive, fully depleted (FD), electrolyte-insulator-semiconductor field-effect transistor (EISFET) made with a silicon-on-insulator (SOI) wafer of a thin 10-30 nm active SOI layer. Initial results are presented for device operation in solutions and for bio-sensing. Here we report the first step towards a high volume manufacturing of a CMOS-based biosensor that will enable various types of applications including medical and enviro nmental sensing. View Full-Text
Keywords: EISFET; biosensors; CMOS; fully depleted EISFET; biosensors; CMOS; fully depleted
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Shalev, G.; Cohen, A.; Doron, A.; Machauf, A.; Horesh, M.; Virobnik, U.; Ullien, D.; Levy, I. Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications. Sensors 2009, 9, 4366-4379.

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