Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

doi:10.3390/s90604366

This article is

freely available
re-usable

Sensors 2009, 9(6), 4366-4379; doi:10.3390/s90604366

Article

Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

Gil Shalev, Ariel Cohen, Amihood Doron, Andrew Machauf, Moran Horesh, Udi Virobnik, Daniela Ullien and Ilan Levy*

Intel Research Israel, Intel Electronics, Jerusalem 91031, Israel

* Author to whom correspondence should be addressed.

Received: 25 March 2009; in revised form: 20 May 2009 / Accepted: 25 May 2009 / Published: 4 June 2009

Download PDF Full-Text [904 KB, uploaded 5 June 2009 07:09 CEST]

Abstract: Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly sensitive, specific, selective and reliable biosensors. This paper presents the fabrication of a sensitive, fully depleted (FD), electrolyte-insulator-semiconductor field-effect transistor (EISFET) made with a silicon-on-insulator (SOI) wafer of a thin 10-30 nm active SOI layer. Initial results are presented for device operation in solutions and for bio-sensing. Here we report the first step towards a high volume manufacturing of a CMOS-based biosensor that will enable various types of applications including medical and enviro nmental sensing.

Keywords: EISFET; biosensors; CMOS; fully depleted

Article Statistics

Click here to load and display the download statistics.

Cite This Article

MDPI and ACS Style

Shalev, G.; Cohen, A.; Doron, A.; Machauf, A.; Horesh, M.; Virobnik, U.; Ullien, D.; Levy, I. Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications. Sensors 2009, 9, 4366-4379.

AMA Style

Shalev G., Cohen A., Doron A., Machauf A., Horesh M., Virobnik U., Ullien D., Levy I. Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications. Sensors. 2009; 9(6):4366-4379.

Chicago/Turabian Style

Shalev, Gil; Cohen, Ariel; Doron, Amihood; Machauf, Andrew; Horesh, Moran; Virobnik, Udi; Ullien, Daniela; Levy, Ilan. 2009. "Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications." Sensors 9, no. 6: 4366-4379.

Sensors EISSN 1424-8220 Published by MDPI Publishing, Basel, Switzerland RSS E-Mail Table of Contents Alert