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Sensors 2009, 9(4), 2895-2906; doi:10.3390/s90402895
Article

A MEMS-based Benzene Gas Sensor with a Self-heating WO3 Sensing Layer

1
, 1
, 2,*  and 2,*
Received: 31 March 2009; in revised form: 17 April 2009 / Accepted: 21 April 2009 / Published: 21 April 2009
(This article belongs to the Special Issue Gas Sensors 2009)
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Abstract: In the study, a MEMS-based benzene gas sensor is presented, consisting of a quartz substrate, a thin-film WO3 sensing layer, an integrated Pt micro-heater, and Pt interdigitated electrodes (IDEs). When benzene is present in the atmosphere, oxidation occurs on the heated WO3 sensing layer. This causes a change in the electrical conductivity of the WO3 film, and hence changes the resistance between the IDEs. The benzene concentration is then computed from the change in the measured resistance. A specific orientation of the WO3 layer is obtained by optimizing the sputtering process parameters. It is found that the sensitivity of the gas sensor is optimized at a working temperature of 300 °C. At the optimal working temperature, the experimental results show that the sensor has a high degree of sensitivity (1.0 KΩ ppm-1), a low detection limit (0.2 ppm) and a rapid response time (35 s).
Keywords: benzene; gas sensor; MEMS; micro-heater; WO3 thin film benzene; gas sensor; MEMS; micro-heater; WO3 thin film
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Ke, M.-T.; Lee, M.-T.; Lee, C.-Y.; Fu, L.-M. A MEMS-based Benzene Gas Sensor with a Self-heating WO3 Sensing Layer. Sensors 2009, 9, 2895-2906.

AMA Style

Ke M-T, Lee M-T, Lee C-Y, Fu L-M. A MEMS-based Benzene Gas Sensor with a Self-heating WO3 Sensing Layer. Sensors. 2009; 9(4):2895-2906.

Chicago/Turabian Style

Ke, Ming-Tsun; Lee, Mu-Tsun; Lee, Chia-Yen; Fu, Lung-Ming. 2009. "A MEMS-based Benzene Gas Sensor with a Self-heating WO3 Sensing Layer." Sensors 9, no. 4: 2895-2906.


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