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Sensors 2009, 9(6), 4669-4694; doi:10.3390/s90604669

Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

1,* , 2
1, 1, 1 and 3
Received: 22 April 2009 / Revised: 21 May 2009 / Accepted: 12 June 2009 / Published: 15 June 2009
(This article belongs to the Special Issue Gas Sensors 2009)


In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.
Keywords: GaN; ZnO; gas sensors GaN; ZnO; gas sensors
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Anderson, T.; Ren, F.; Pearton, S.; Kang, B.S.; Wang, H.-T.; Chang, C.-Y.; Lin, J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors 2009, 9, 4669-4694.

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