Sensors 2007, 7(9), 1713-1719; doi:10.3390/s7091713
Article

Modeling of Photoinduced Deformation in Silicon Microcantilever

ASIC and System National Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, China
* Author to whom correspondence should be addressed.
Received: 24 July 2007; Accepted: 27 August 2007 / Published: 3 September 2007
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Abstract: A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times.
Keywords: Photostriction; microcantilever; deformation; silicon

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MDPI and ACS Style

Guo, Y.-L.; Zhou, J.; Huang, Y.; Bao, M. Modeling of Photoinduced Deformation in Silicon Microcantilever. Sensors 2007, 7, 1713-1719.

AMA Style

Guo Y-L, Zhou J, Huang Y, Bao M. Modeling of Photoinduced Deformation in Silicon Microcantilever. Sensors. 2007; 7(9):1713-1719.

Chicago/Turabian Style

Guo, Yu-Lin; Zhou, Jia; Huang, Yiping; Bao, MinHang. 2007. "Modeling of Photoinduced Deformation in Silicon Microcantilever." Sensors 7, no. 9: 1713-1719.

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