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Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2
Photo- & Electro-Materials Research Center, Korea Institute of Energy Research, 71-2 Jangdong Yusung, Daejeon 305-343, Korea
Department of Chemistry, Maharshi Dayanand University, Rohtak-124 001, India
* Author to whom correspondence should be addressed.
Received: 13 March 2006; Accepted: 9 May 2006 / Published: 9 May 2006
(This article belongs to the Special Issue Gas Sensors
Abstract: Effects of surface chemical modification with sodium silicate on the gas-sensingproperties of F-doped SnO2 gas sensor designed and fabricated employing micro-electromechanical system (MEMS) technology were investigated. Gas sensing properties of thesensor were checked against combustible gases like H2, CO, CH4 and C3H8 at a heatervoltage of 0.7 V. The H2 sensitivity of the surface modified F-doped SnO2 micro sensormarkedly increased and reached S = 175 which was found to be about 40 times more thanthat of unmodified sensor (S = ~ 4.2). The increase in the sensitivity is discussed in terms ofincreased resistivity and reduced permeation of gaseous oxygen into the underlying sensinglayer due to the surface modification of the sensor. The present micro-hydrogen sensor withenhanced sensitivity due to SiO2 incorporation is a low energy consuming portable sensormodule that can be mass-produced using MEMS technology at low cost.
Keywords: F-doped SnO2 sensor; Surface modification; Sodium silicate; H2 sensitivity; MEMS technology.
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MDPI and ACS Style
Han, C.-H.; Han, S.-D.; Khatkar, S.P. Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2. Sensors 2006, 6, 492-502.
Han C-H, Han S-D, Khatkar SP. Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2. Sensors. 2006; 6(5):492-502.
Han, Chi-Hwan; Han, Sang-Do; Khatkar, S. P. 2006. "Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2." Sensors 6, no. 5: 492-502.