Next Article in Journal
Next Article in Special Issue
Previous Article in Journal
Previous Article in Special Issue
Sensors 2006, 6(5), 492-502; doi:10.3390/s6050492
Article

Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2

1, 1,*  and 2
Received: 13 March 2006; Accepted: 9 May 2006 / Published: 9 May 2006
(This article belongs to the Special Issue Gas Sensors)
View Full-Text   |   Download PDF [153 KB, uploaded 20 June 2014]
Abstract: Effects of surface chemical modification with sodium silicate on the gas-sensingproperties of F-doped SnO2 gas sensor designed and fabricated employing micro-electromechanical system (MEMS) technology were investigated. Gas sensing properties of thesensor were checked against combustible gases like H2, CO, CH4 and C3H8 at a heatervoltage of 0.7 V. The H2 sensitivity of the surface modified F-doped SnO2 micro sensormarkedly increased and reached S = 175 which was found to be about 40 times more thanthat of unmodified sensor (S = ~ 4.2). The increase in the sensitivity is discussed in terms ofincreased resistivity and reduced permeation of gaseous oxygen into the underlying sensinglayer due to the surface modification of the sensor. The present micro-hydrogen sensor withenhanced sensitivity due to SiO2 incorporation is a low energy consuming portable sensormodule that can be mass-produced using MEMS technology at low cost.
Keywords: F-doped SnO2 sensor; Surface modification; Sodium silicate; H2 sensitivity; MEMS technology. F-doped SnO2 sensor; Surface modification; Sodium silicate; H2 sensitivity; MEMS technology.
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Han, C.-H.; Han, S.-D.; Khatkar, S.P. Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2. Sensors 2006, 6, 492-502.

AMA Style

Han C-H, Han S-D, Khatkar SP. Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2. Sensors. 2006; 6(5):492-502.

Chicago/Turabian Style

Han, Chi-Hwan; Han, Sang-Do; Khatkar, S. P. 2006. "Enhancement of H2-sensing Properties of F-doped SnO2 Sensorby Surface Modification with SiO2." Sensors 6, no. 5: 492-502.


Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert