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Sensors 2006, 6(4), 350-360; doi:10.3390/S6040350

Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

1
Aachen University of Applied Sciences, Jülich Campus, Ginsterweg 1, D-52428 Jülich, Germany
2
Research Centre Jülich, Institute of Thin Films and Interfaces (ISG1), D-52425 Jülich, Germany
3
National Institute of Materials Physics, Bucharest, Romania
*
Author to whom correspondence should be addressed.
Received: 31 August 2005 / Accepted: 4 January 2006 / Published: 7 April 2006
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Abstract

GaAs-based Gunn diodes with graded AlGaAs hot electron injectorheterostructures have been developed under the special needs in automotive applications.The fabrication of the Gunn diode chips was based on total substrate removal andprocessing of integrated Au heat sinks. Especially, the thermal and RF behavior of thediodes have been analyzed by DC, impedance and S-parameter measurements. Theelectrical investigations have revealed the functionality of the hot electron injector. Anoptimized layer structure could fulfill the requirements in adaptive cruise control (ACC)systems at 77 GHz with typical output power between 50 and 90 mW. View Full-Text
Keywords: Gunn diode; microwave generation; GaAs hot electron injector. Gunn diode; microwave generation; GaAs hot electron injector.
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Förster, A.; Stock, J.; Montanari, S.; Lepsa, M.I.; Lüth, H. Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry. Sensors 2006, 6, 350-360.

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