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Sensors 2005, 5(12), 519-528;

Surface Morphology and Sensing Property of NiO-WO3 Thin Films Prepared by Thermal Evaporation

Department of Advanced Materials and Engineering, Chosun University, Gwangju 501-759, Korea.
Research Institute of Energy Resources Technology, Chosun University, Gwangju 501-759, Korea.
JAMIC, Sunchun, Jeonnam 540-856, Korea
Department of Physics, Chosun University, Gwangju 501-759, Korea
Author to whom correspondence should be addressed.
Received: 18 November 2005 / Accepted: 30 November 2005 / Published: 1 December 2005
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WO3 and NiO-WO3 thin films of various thicknesses were deposited on anAl2O3-Si (alumina-silicon) substrate using high vacuum thermal evaporation. Afterannealing at 500oC for 30 minutes in air, the crystallanity and surface morphology of WO3and NiO-WO3 thin films were investigated using X-ray diffraction (XRD) and ScanningElectron Microscopy (SEM). It is observed that the WO3 thin films were resulted in cracksbetween the polycrystalline grains and the grain growth was increased with increasingthickness causing deteriorated sensing characteristics of the films. On the other hand, anoptimum deposition of NiO on WO3 thin film has inhibited the grain growth and improvedthe sensitivity of the films. The inhibition is limited to a certain thickness of WO3 and NiOcontent (mol %) of inclusion and below or above this limitation the grain growth could notbe suppressed. Moreover, the deposition sequence of NiO and WO3 is also playing asignificant role in controlling the grain growth. A probable mechanism for the control ofgrain growth and improving the sensing property has been discussed. View Full-Text
Keywords: Tungston Oxide; Thin films; Thermal evaporation; surface morphology Tungston Oxide; Thin films; Thermal evaporation; surface morphology
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Na, D.-M.; Satyanarayana, L.; Choi, G.-P.; Shin, Y.-J.; Park, J.S. Surface Morphology and Sensing Property of NiO-WO3 Thin Films Prepared by Thermal Evaporation. Sensors 2005, 5, 519-528.

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